A Dual-Band Millimeter-Wave CMOS Oscillator With Left-Handed Resonator

Author

Yu, A.H.-T. ; Sai-Wang Tam ; Yanghyo Kim ; Socher, E. ; Hant, W. ; Chang, Mau-Chung Frank ; Itoh, T.

Author_Institution

Electr. Eng. Dept., Univ. of California Los Angeles, Los Angeles, CA, USA

Volume

58

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

1401

Lastpage

1409

Abstract

A new technique using a left-handed (LH) resonator to generate a multiband millimeter-wave carrier signal is proposed in this paper. The LH resonator exhibits nonlinear dispersion characteristic, which enables uneven spacing between resonant frequencies. With N stages of the LH unit cell, there are N/2 +1 resonant frequencies from the nonlinear dispersion curve. Moreover, the band selection switches are not located in the signal path, which can, therefore, dramatically reduce the size of switches and improve the overall quality factor of the resonator. A dual-band millimeter-wave oscillator in digital 90-nm CMOS technology is implemented to demonstrate this new technique. Using a mode selection switch, the proposed oscillator operates at 21.3 and 55.3 GHz, respectively, with a total power consumption of 14 mW.

Keywords

CMOS digital integrated circuits; MMIC oscillators; Q-factor; resonators; digital CMOS technology; dualband millimeter-wave CMOS oscillator; frequency 21.3 GHz; frequency 55.3 GHz; left-handed resonator; multiband millimeter-wave carrier signal; power 14 mW; quality factor; size 90 nm; CMOS technology; Degradation; Dual band; Energy consumption; Millimeter wave technology; Parasitic capacitance; Q factor; Resonant frequency; Switches; Voltage-controlled oscillators; CMOS; composite right/left-handed (CRLH); dual band; left-handed (LH); millimeter wave; oscillator; resonator;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2042854

Filename

5439909