A double lightly doped drain (D-LDD) structure H-MESFET for MMIC applications

Author

Yamane, Yasuro ; Onodera, Kiyomitsu ; Nittono, Takumi ; Nishimura, Kazumi ; Yamasaki, Kimiyoshi ; Kanda, Atsushi

Author_Institution

NTT System Electron. Labs., Kanagawa, Japan

Volume

45

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2229

Lastpage

2233

Abstract

This paper proposes a new double lightly doped drain (D-LDD) structure for InGaP/InGaAs heterostructure MESFETs (H-MESFETs). A D-LDD H-MESFET has three kinds of low-resistant layers in the drain region, while a conventional LDD H-MESFET has two layers. This structure improves maximum stable gain (MSG) accompanied by R_d reduction with minimized gate-breakdown-voltage degradation and C_gd increase. A heuristic model is proposed to predict V_bgd from sheet resistance of implanted layers, and its validity is confirmed with experimental data. This model successfully predicted the tradeoff relation between V_bgd and parasitic resistance, and it has enough generality so that it can be applied to usual ion-implanted GaAs MESFETs. Consequently, a typical MSG at 50 GHz exhibits 8.9 dB in a MESFET and 7.7 dB S21 in an one-stage amplifier. The high-frequency circuit operation proves that this technology is one of the most promising for monolithic-microwave integrated-circuit (MMIC) applications

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; Schottky gate field effect transistors; field effect MMIC; gallium arsenide; gallium compounds; indium compounds; 50 GHz; 7.7 dB; 8.9 dB; D-LDD H-MESFET; InGaP-InGaAs; InGaP/InGaAs heterostructure MESFET; MMIC; double lightly doped drain; gate-breakdown-voltage; heuristic model; high-frequency circuit; ion implanted layer; maximum stable gain; one-stage amplifier; parasitic resistance; sheet resistance; Degradation; Gallium arsenide; Indium gallium arsenide; MESFETs; MMICs; Microwave devices; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Predictive models;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.643821

Filename

643821