DocumentCode
1457341
Title
Channel-length measurement technique based on a floating-gate device
Author
Eitan, Boaz
Author_Institution
WaferScale Integration Inc., Fremont, CA, USA
Volume
9
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
340
Lastpage
342
Abstract
By measuring the threshold voltage of the structure for several drawn channel lengths, Delta L is extracted. This technique is the translation of a capacitance measurement into a threshold measurement and as such is accurate and simple to perform. Since the technique does not involve a current flow through the transistor under test, it is especially advantageous for L/sub eff/ measurements on lightly-doped drain (LDD) and double-diffused drain (DDD) short-channel devices.<>
Keywords
capacitance measurement; insulated gate field effect transistors; MOSFET; capacitance measurement; double-diffused drain; drawn channel lengths; floating-gate device; lightly-doped drain; short-channel devices; threshold measurement; threshold voltage; Capacitance measurement; Capacitors; Circuit testing; Current measurement; Length measurement; MOS devices; Measurement techniques; Threshold voltage; Voltage control; Voltage measurement;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.737
Filename
737
Link To Document