Computer simulation of amorphous-silicon charge-coupled devices

Author

Yue, Jin-hai ; Sekine, Satoshi ; Nakamura, Satoshi ; Oda, Shunri ; Matsumura, Masakiyo

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

Volume

35

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1664

Lastpage

1671

Abstract

The electron dynamics in amorphous-silicon charge-coupled devices have been investigated numerically by taking into account tail states and deep defect states in the energy gap of the active amorphous-silicon layer. It has been revealed that the deep states far from the conduction band have a great influence on electron-transfer characteristics and that a field-free region caused by metallic electrodes prevents quick drift motion of electrons. Based on those numerical results, a novel device structure with a narrow channel has been proposed. Calculated results on device efficiency agree well with the experimental data of M. Matsumara et al. (1987), assuming a deep-state density of 2×10¹⁶ cm^-4/eV

Keywords

amorphous semiconductors; charge-coupled devices; defect electron energy states; silicon; Si; amorphous semiconductors; charge-coupled devices; conduction band; deep defect states; device efficiency; electron dynamics; electron-transfer characteristics; energy gap; field-free region; metallic electrodes; narrow channel; tail states; Charge coupled devices; Computer simulation; Electrons; Facsimile; Information analysis; Numerical analysis; Performance analysis; Tail; Thermal conductivity; Transmitters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7370

Filename

7370