DocumentCode
145737
Title
Anomalous optical switching during semiconductor-metal phase transition of VO2 films on Si
Author
Leahu, G. ; Voti, R. Li ; Sibilia, C. ; Bertolotti, M.
Author_Institution
Dipt. di Sci. di Base ed Applicate all´Ing., Sapienza Univ. di Roma, Rome, Italy
fYear
2014
fDate
25-28 Aug. 2014
Firstpage
409
Lastpage
411
Abstract
We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide film deposited on silicon wafer and in a multilayer Cu/VO2 Structure. All structures have been studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements.
Keywords
copper; metal-insulator transition; multilayers; thermo-optical effects; thin films; vanadium compounds; Cu-VO2; Si; anomalous optical switching; midinfrared region; multilayer structure; reflectance measurements; semiconductor-metal phase transition; silicon wafer; transmittance measurements; vanadium dioxide film; Hysteresis; Optical films; Reflectivity; Semiconductor device measurement; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Electromagnetic Materials in Microwaves and Optics (METAMATERIALS), 2014 8th International Congress on
Conference_Location
Lyngby
Print_ISBN
978-1-4799-3450-8
Type
conf
DOI
10.1109/MetaMaterials.2014.6948577
Filename
6948577
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