Title :
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
Author :
Moschetti, G. ; Wadefalk, N. ; Nilsson, P. -Å ; Abbasi, M. ; Desplanque, L. ; Wallart, X. ; Grahn, J.
Author_Institution :
Dept. of Microelectron. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
3/1/2012 12:00:00 AM
Abstract :
A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
Keywords :
aluminium compounds; high electron mobility transistors; indium compounds; intermediate-frequency amplifiers; low noise amplifiers; low-power electronics; low-temperature techniques; semiconductor device noise; transducers; wideband amplifiers; HEMT process; InAs-AlSb; best noise performance; cryogenic HEMT wideband low-noise IF amplifier; cryogenic temperature; cryogenic wideband hybrid low-noise amplifier; frequency 4 GHz to 8 GHz; gain 29 dB; gate length; low-noise amplifiers; low-power capability; low-voltage capability; noise temperature; optimum drain voltage; power 6 mW; power consumption; temperature 13 K; temperature 19 K; three-stage amplifier; transducer gain; ultra-low-power applications; Cryogenics; Frequency measurement; Gain; HEMTs; Noise; Power demand; Cryogenic; InAs/AlSb HEMT; low-noise amplifier (LNA); low-power;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2182637
