Title :
A GaAlAs-GaAs integrated coherence modulator
Author :
Khalfallah, Sabry ; Dubreuil, Pascal ; Escotte, Laurent ; Legros, René ; Fontaine, Chantal ; Muñoz-Yagüe, Antonio ; Beche, Bruno ; Porte, Henri
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
fDate :
1/1/1999 12:00:00 AM
Abstract :
This paper presents a novel integrated III-V semiconductor waveguide modulator specially designed to generate optical delays of several hundred micrometers. This is achieved by simultaneous propagation of transverse electric (TE) and transverse magnetic (TM) lowest order modes in an original layered waveguide exhibiting a group birefringence greater than 0.02 at 1.3 μm. The device has 40% contrast, a switching voltage of 7 V with a 10-mm long electrode and is suitable for transmission and multiplexing of signals by coherence modulation of light in an optical fiber network powered by a short coherence source such as a superluminescent diode
Keywords :
III-V semiconductors; aluminium compounds; birefringence; electro-optical modulation; electrodes; gallium arsenide; integrated optics; light coherence; optical communication equipment; 1.3 mum; 10 mm; 7 V; GaAlAs-GaAs; GaAlAs-GaAs integrated coherence modulator; TE lowest order modes; TM lowest order modes; coherence modulation; electrode; group birefringence; integrated III-V semiconductor waveguide modulator; optical delays; optical fiber network; original layered waveguide; short coherence source; simultaneous propagation; superluminescent diode; switching voltage; Coherence; III-V semiconductor materials; Integrated optics; Optical design; Optical modulation; Optical propagation; Optical waveguides; Propagation delay; Semiconductor waveguides; Tellurium;
Journal_Title :
Lightwave Technology, Journal of
