A 63-170 GHz second-harmonic operation of an InP transferred electron device

Author

Jones, Stephen H. ; Zybura, Michael F. ; Carlstrom, John E. ; O´Brien, Tim M.

Author_Institution

Appl. Electrophys. Lab., Virginia Univ., Charlottesville, VA, USA

Volume

46

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

17

Lastpage

23

Abstract

Theoretical and experimental analysis of a second-harmonic InP transferred electron device is presented for the 63-170 GHz frequency band. This broadband device produces 30 mW at 63 GHz, 85 mW at 122 GHz, and 8 mW at 170 GHz; in all cases the diode is operating in the second-harmonic mode. A continuously-tunable cavity has been used to produce 30-40 mW of output power over the 119-147.5 GHz range without any detectable frequency jumps or power dips. High frequency structure simulator (HFSS) and drift-diffusion harmonic-balance analysis (DDHB) are used to self-consistently analyze the second-harmonic TEO operation. Numerical simulation results are presented that explain the broadband behavior of the device, and determine the optimal device embedding impedance. Simulations are capable of predicting operating frequencies to within several GHz and output powers to within about 20% accuracy

Keywords

Gunn diodes; III-V semiconductors; harmonic analysis; indium compounds; millimetre wave diodes; semiconductor device models; 119 to 147.5 GHz; 63 to 170 GHz; 8 to 85 mW; InP; broadband device; continuously-tunable cavity; drift-diffusion harmonic-balance analysis; high frequency structure simulator; operating frequencies; optimal device embedding impedance; output power; output powers; second-harmonic operation; transferred electron device; Analytical models; Diodes; Frequency; Gunn devices; Harmonic analysis; Impedance; Indium phosphide; Numerical simulation; Power generation; Predictive models;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.737436

Filename

737436