An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G

Author

Von Kluge, Johannes W A ; Langheinrich, Werner A.

Author_Institution

Solid State Electron. Labs., Tech. Hochschule Darmstadt, Germany

Volume

46

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

89

Lastpage

95

Abstract

An analytical model of the sensitivity of magnetic field-effect transistors (MAGFET´s) is presented. The model includes secondary and parasitic geometric effects as well as operating point dependencies. In order to get a continuous mathematical description for the sensitivity, we introduce a continuous function for the geometric correction factor G. This description of G is not limited to MAGFET´s and can be used for any magnetic device

Keywords

MOSFET; field effect transistors; magnetic sensors; semiconductor device models; sensitivity analysis; MAGFET sensitivity; analytical model; continuous description; geometric correction factor; magnetic field-effect transistors; operating point dependencies; parasitic geometric effects; secondary effects; Analytical models; Charge carriers; Current density; Difference equations; FETs; Lorentz covariance; Magnetic devices; Magnetic field measurement; Magnetic fields; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.737446

Filename

737446