Title :
Observation of “capacitance overshoot” in the transient current measurement of polysilicon TFT´s
Author :
Tam, Simon W-B ; Migliorato, P. ; Lui, O.K.B. ; Quinn, M.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
1/1/1999 12:00:00 AM
Abstract :
We have observed and analyzed a new effect in the transient current measurement of polysilicon TFT´s: the presence of an “overshoot” in the transient response, which implies a time dependent gate capacitance exceeding Cox WL. We have also performed two-dimensional (2-D) transient simulations to explain the experimental results. Our analysis indicates that a TFT circuit model based on lumped intranodal impedances cannot explain the observed transient current behavior. It follows that the “subtransistor” approach is essential for accurate dynamic circuit simulations
Keywords :
MOS integrated circuits; capacitance; circuit simulation; electric current measurement; elemental semiconductors; silicon; thin film transistors; transient analysis; transient response; 2D transient simulations; Si; capacitance overshoot; dynamic circuit simulations; lumped intranodal impedances; polysilicon TFTs; subtransistor approach; time dependent gate capacitance; transient current measurement; transient response; Analytical models; Capacitance; Circuit simulation; Current measurement; Performance analysis; Performance evaluation; Thin film transistors; Transient analysis; Transient response; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
