DocumentCode
1457913
Title
Junction leakage characteristics in modified LOCOS isolation structures with a nitride spacer
Author
Jang, Se-Aug ; Yeo, In-Seok ; Kim, Young-Bog
Author_Institution
Semicond. Res. Div., Hyundai Electron. Ind. Co., Kyoungki, South Korea
Volume
46
Issue
1
fYear
1999
fDate
1/1/1999 12:00:00 AM
Firstpage
145
Lastpage
150
Abstract
Junction leakage characteristics in modified local oxidation of silicon (LOCOS) isolation structures have been studied when a nitride spacer was used to prevent bird´s beak encroachment. Junction leakages with very low activation energy and strong voltage dependence were observed in the nitride spacered LOCOS. Comparative studies on the junction leakages of nonrecessed and recessed LOCOS have revealed that an additional silicon recess process after nitride spacer formation reduces the junction leakage current
Keywords
isolation technology; leakage currents; oxidation; LOCOS isolation; activation energy; bird´s beak; junction leakage current; nitride spacer; silicon recess; voltage dependence; Degradation; Electric resistance; Etching; Leakage current; MOS devices; Oxidation; Semiconductor films; Silicon; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.737453
Filename
737453
Link To Document