Title :
Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology
Author :
Yoneyama, Mikio ; Sano, Akihide ; Hagimoto, Kazuo ; Otsuji, Taiichi ; Murata, Koichi ; Imai, Yuhki ; Yamaguchi, Satoshi ; Enoki, Takatomo ; Sano, Eiichi
Author_Institution :
NTT Opt. Network Syst. Labs., Kanagawa, Japan
fDate :
12/1/1997 12:00:00 AM
Abstract :
This paper describes an optical repeater circuit that uses an InAlAs/InGaAs HEMT digital integrated circuit (IC) chip set. The chip set includes a 64-Gb/s 2:1 multiplexer (MUX), a 40-Gb/s demultiplexer (DEMUX), a 46-Gb/s decision circuit (DEC), and a 48-GHz frequency divider (DIV). Electrically multiplexed and demultiplexed 40-Gb/s 300-km transmission is successfully demonstrated
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect digital integrated circuits; gallium arsenide; indium compounds; optical repeaters; 300 km; 40 Gbit/s; InAlAs-InGaAs; InAlAs/InGaAs HEMT digital IC; decision circuit; demultiplexer; frequency divider; multiplexer; optical repeater circuit; Circuit synthesis; Digital integrated circuits; HEMTs; Indium compounds; Indium gallium arsenide; Integrated optics; Multiplexing; Optical frequency conversion; Photonic integrated circuits; Repeaters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
