Analysis of the spurious negative resistance of PN junction avalanche breakdown

Author

Hong, Sung-Joon ; Kim, Jae-Joon ; Park, Young June ; Min, Hong Shick

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

46

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

230

Lastpage

236

Abstract

The PN junction avalanche breakdown simulation with the local temperature model shows the negative resistance in the current-voltage I-V characteristics in contrast to the simulation with the local field model. We show that the negative resistance is due to the increase of the electron temperature with the reverse current increase near the depletion layer edge where the hot electrons heated in the depletion region are embedded in a large number of cold electrons. It is also shown that the negative resistance predicted by the local temperature model is spurious with the help of Tail Electron HydroDynamic (TEHD) impact ionization model which separately considers the hot carrier population

Keywords

avalanche breakdown; hot carriers; impact ionisation; negative resistance; p-n junctions; PN junction; avalanche breakdown; current-voltage characteristics; depletion layer; electron temperature; hot electrons; local field model; local temperature model; negative resistance; simulation; tail electron hydrodynamic impact ionization model; Analytical models; Avalanche breakdown; Electric breakdown; Electrical resistance measurement; Electrons; High definition video; Immune system; Impact ionization; Predictive models; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.737463

Filename

737463