Title :
Analysis of the spurious negative resistance of PN junction avalanche breakdown
Author :
Hong, Sung-Joon ; Kim, Jae-Joon ; Park, Young June ; Min, Hong Shick
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
1/1/1999 12:00:00 AM
Abstract :
The PN junction avalanche breakdown simulation with the local temperature model shows the negative resistance in the current-voltage I-V characteristics in contrast to the simulation with the local field model. We show that the negative resistance is due to the increase of the electron temperature with the reverse current increase near the depletion layer edge where the hot electrons heated in the depletion region are embedded in a large number of cold electrons. It is also shown that the negative resistance predicted by the local temperature model is spurious with the help of Tail Electron HydroDynamic (TEHD) impact ionization model which separately considers the hot carrier population
Keywords :
avalanche breakdown; hot carriers; impact ionisation; negative resistance; p-n junctions; PN junction; avalanche breakdown; current-voltage characteristics; depletion layer; electron temperature; hot electrons; local field model; local temperature model; negative resistance; simulation; tail electron hydrodynamic impact ionization model; Analytical models; Avalanche breakdown; Electric breakdown; Electrical resistance measurement; Electrons; High definition video; Immune system; Impact ionization; Predictive models; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
