Title :
Oscillation effects in IGBT´s related to negative capacitance phenomena
Author :
Omura, Ichiro ; Fichtner, Wolfgang ; Ohashi, Hiromichi
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
1/1/1999 12:00:00 AM
Abstract :
Insulated gate bipolar transistors (IGBT´s) are inherently unstable at high collector voltages due to negative gate capacitance values. We investigate IGBT gate voltage oscillations by experiment and through computer simulation. In addition, we show that under certain gate circuit conditions, gate voltage oscillations can lead to already observed collector current imbalance effects
Keywords :
capacitance; insulated gate bipolar transistors; IGBT; collector current imbalance; computer simulation; gate voltage oscillation; insulated gate bipolar transistor; negative capacitance; Associate members; Capacitance measurement; Capacitors; Charge measurement; Circuits; Current control; Current measurement; Insulated gate bipolar transistors; Temperature measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
