• DocumentCode
    1458011
  • Title

    Temperature-dependent kink effect model for partially-depleted SOI NMOS devices

  • Author

    Lin, S.C. ; Kuo, J.B.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    46
  • Issue
    1
  • fYear
    1999
  • fDate
    1/1/1999 12:00:00 AM
  • Firstpage
    254
  • Lastpage
    258
  • Abstract
    This paper reports a closed-form analytical temperature-dependent kink effect model for the partially-depleted SOI NMOS devices. Based on the body-emitter voltage model, an analytical triggering VDS formula for temperature-dependent kink effect has been obtained. According to the analytical model, at a higher operation temperature and with a lighter thin-film doping density, the onset of the kink effect occurs at a larger VDS
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; analytical model; body emitter voltage model; partially depleted SOI NMOS device; temperature dependent kink effect; thin film doping density; Analytical models; CMOS logic circuits; Electron mobility; Impact ionization; MOS devices; Semiconductor process modeling; Spontaneous emission; Temperature; Thin film devices; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.737467
  • Filename
    737467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1458011