Title :
A study of the surface passivation on GaAs and In0.53Ga 0.47As Schottky-barrier photodiodes using SiO2, Si 3N4 and polyimide
Author :
Lee, D.H. ; Li, Sheng S. ; Lee, S. ; Ramaswamy, R.V.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
10/1/1988 12:00:00 AM
Abstract :
Studies of surface passivation and antireflection coating on GaAs and In0.53Ga0.47As interdigitated metal-semiconductor-metal (IMSM) Schottky-barrier photodiodes have been made using SiO2, Si3N4, and polyimide deposited films. The results show that Si3N4 on GaAs and polyimide on In0.53Ga0.47As are the most effective dielectric films for reducing the leakage current and reflection loss in these photodiodes
Keywords :
Schottky-barrier diodes; antireflection coatings; dielectric thin films; metal-semiconductor-metal structures; passivation; photodiodes; GaAs; In0.53Ga0.47As; InGaAs-InP; Schottky-barrier photodiodes; antireflection coating; dielectric films; interdigitated metal-semiconductor-metal; leakage current; polyimide; reflection loss; surface passivation; Coatings; Dielectric films; Gallium arsenide; Leakage current; Optical films; Passivation; Photodiodes; Polyimides; Reflection; Semiconductor films;
Journal_Title :
Electron Devices, IEEE Transactions on
