Super-High-Frequency SAW Resonators on AlN/Diamond

Author

Rodríguez-Madrid, J.G. ; Iriarte, G.F. ; Pedrós, J. ; Williams, O.A. ; Brink, D. ; Calle, F.

Author_Institution

Dept. de Ing. Electron., Univ. Politec. de Madrid, Madrid, Spain

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

495

Lastpage

497

Abstract

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.

Keywords

aluminium compounds; carbon; electron beam lithography; piezoelectric materials; surface acoustic wave resonators; thin films; AlN-C; SAW device response; diamond heterostructures; e-beam lithographic techniques; film thickness; frequency 10 GHz to 14 GHz; high-performance surface acoustic wave resonator manufacturing; one-port SAW resonator fabrication; optimized thin films; piezoelectric layer; size 200 nm; super-high-frequency SAW resonators; Diamond-like carbon; Resonant frequency; Substrates; Surface acoustic wave devices; Surface acoustic waves; AlN/diamond; super-high-frequency band; surface acoustic wave (SAW) resonator; thickness influence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2183851

Filename

6158573