Title :
I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance
Author :
Wu, Chieh-Lin ; Yu, Chikuang ; Shichijo, Hisashi ; Kenneth, K.O.
Author_Institution :
Dept. of Electr. Eng., Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Texas at Dallas, Richardson, TX, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
A new body-tied (BT) (I-gate) silicon-on-insulator transistor with comparable f_T and f_ as those of floating-body transistors and comparable analog performance as those of T-gate BT transistors is demonstrated. The structure is fabricated without process modifications by selectively blocking silicide formation and source/drain implant in a foundry technology.
Keywords :
MOSFET; silicon-on-insulator; SOI; T-gate BT transistors; comparable analog performance; floating-body transistors; foundry technology; i-gate body-tied silicon-on-insulator MOSFET; source-drain implant; Implants; Layout; Logic gates; MOSFETs; Performance evaluation; Silicides; Body tie; I-gate; MOSFET; T-gate; floating body (FB); silicon-on-insulator (SOI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2106755
