On the Number of Noise Parameters for Analyses of Circuits With MOSFETs

Author

Belostotski, Leonid

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada

Volume

59

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

877

Lastpage

881

Abstract

The inequality relating F_min and Lange invariant N for any noisy linear two-port network has been known since the 1980s. However, the applicability of this inequality to MOSFETs is not discussed in the literature, and thus, this inequality is not normally treated in analyses and designs of circuits based on MOSFETs. This work shows that by using N, the number of noise parameters required to model high-frequency noise of intrinsic MOSFETs can be reduced by one. This reduction in the noise parameters simplifies the noise correlation matrices, which leads to simpler noise factor expressions. A new set of noise correlation matrices and noise factor expressions is presented. These are expected to ease circuit optimizations of low-noise amplifiers and other circuits based on intrinsic MOSFET models.

Keywords

MOSFET; circuit optimisation; integrated circuit design; low noise amplifiers; semiconductor device noise; Lange invariant N; MOSFET; circuit optimisation analysis; high-frequency noise; low-noise amplifier; noise correlation matrix; noise factor expression; noise parameter; noisy linear two-port network; Correlation; Integrated circuit modeling; Logic gates; MOSFETs; Noise; Noise measurement; CMOS; MOSFET; MOSFET amplifiers; integrated circuit noise; noise parameters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2011.2109734

Filename

5719627