Title :
Internally biased transistor simulation model
Author :
Floberg, H. ; Bjork, C.
Author_Institution :
Ericsson Mobile Commun. AB, Lund, Sweden
fDate :
3/1/2001 12:00:00 AM
Abstract :
An augmented transistor model where a three-terminal device is atomically biased internally is presented. A duplicate of the signal transistor is used to solve the bias equation. This model makes it convenient to compare circuit topologies by simulation
Keywords :
semiconductor device models; transistors; circuit topology; internal bias; signal transistor; simulation model; three-terminal device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010189
