• DocumentCode
    1458668
  • Title

    High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N2O-plasma oxide

  • Author

    Lee, Nae-In ; Lee, Jin-Woo ; Kim, Hyoung-Sub ; Han, Chul-Hi

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • Volume
    20
  • Issue
    1
  • fYear
    1999
  • Firstpage
    15
  • Lastpage
    17
  • Abstract
    High-performance EEPROMs using n- and p-channel polysilicon thin-film transistors (poly-Si TFTs) with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide have been demonstrated. Both programming and erasing were accomplished by Fowler-Nordheim (F-N) tunneling within 1 ms regardless of programming and erasing voltages. The poly-Si TFT EEPROMs have a threshold voltage shift of 4 V between programmed and erased states; furthermore, they maintain a large threshold voltage shift of 2.5 V after 1/spl times/10/sup 5/ program and erase cycles. This is attributed to the excellent charge-to-breakdown (Qbd) up to 10 C/cm/sup 2/ of ECR N/sub 2/O-plasma oxide.
  • Keywords
    EPROM; elemental semiconductors; plasma CVD; semiconductor device testing; silicon; thin film transistors; tunnel transistors; ECR N/sub 2/O-plasma oxide; Fowler-Nordheim tunneling; I-V transfer characteristics; N/sub 2/O; Si-SiO/sub 2/; charge-to-breakdown; endurance characteristics; erasing; n-channel polysilicon TFT; p-channel polysilicon TFT; polysilicon TFT EEPROM; programming; threshold voltage shift; Cyclotrons; Design for quality; EPROM; Electrons; Image storage; Nitrogen; Resonance; Thin film transistors; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.737559
  • Filename
    737559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1458668