Title :
High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N2O-plasma oxide
Author :
Lee, Nae-In ; Lee, Jin-Woo ; Kim, Hyoung-Sub ; Han, Chul-Hi
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
High-performance EEPROMs using n- and p-channel polysilicon thin-film transistors (poly-Si TFTs) with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide have been demonstrated. Both programming and erasing were accomplished by Fowler-Nordheim (F-N) tunneling within 1 ms regardless of programming and erasing voltages. The poly-Si TFT EEPROMs have a threshold voltage shift of 4 V between programmed and erased states; furthermore, they maintain a large threshold voltage shift of 2.5 V after 1/spl times/10/sup 5/ program and erase cycles. This is attributed to the excellent charge-to-breakdown (Qbd) up to 10 C/cm/sup 2/ of ECR N/sub 2/O-plasma oxide.
Keywords :
EPROM; elemental semiconductors; plasma CVD; semiconductor device testing; silicon; thin film transistors; tunnel transistors; ECR N/sub 2/O-plasma oxide; Fowler-Nordheim tunneling; I-V transfer characteristics; N/sub 2/O; Si-SiO/sub 2/; charge-to-breakdown; endurance characteristics; erasing; n-channel polysilicon TFT; p-channel polysilicon TFT; polysilicon TFT EEPROM; programming; threshold voltage shift; Cyclotrons; Design for quality; EPROM; Electrons; Image storage; Nitrogen; Resonance; Thin film transistors; Threshold voltage; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
