Title :
Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application
Author :
Shey-Shi Lu ; Yao-Wen Hsu ; Chin-Chun Meng ; Liang-Po Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Single-voltage-supply operation of insulated-gate FETs using Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As heterostructures for power application was demonstrated for the first time. It is found that the device can be operated with gate voltage up to 2 V without significant drain current compression. Because of this high gate operating voltage, single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs was achieved. Preliminary results show that for a 1-μm gate length device operated at 1.8 GHz under class A-bias condition, this power FET showed a 14.5-dBm (140 mW/mm) saturated power with a power added efficiency of 30% when the drain voltage is 4.8 V.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium arsenide; gallium compounds; indium compounds; insulated gate field effect transistors; power field effect transistors; semiconductor device measurement; 1 mum; 1.8 GHz; 2 V; 30 percent; 4.8 V; DC I-V characteristics; Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As; Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As heterostructures; GaAs; GaInP/InGaAs power insulated-gate FET; class A-bias condition; drain current compression; drain voltage; gate length; gate voltage; high gate operating voltage; insulated-gate FET; power IGFET; power added efficiency; power application; saturated power; single-voltage-supply operation; Cellular phones; FETs; Fingers; Gallium arsenide; Insulation; MESFETs; Metal-insulator structures; PHEMTs; Schottky barriers; Voltage;
Journal_Title :
Electron Device Letters, IEEE
