An HBT noise model valid up to transit frequency

Author

Rudolph, M. ; Doerner, R. ; Klapproth, L. ; Heymann, P.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

20

Issue

1

fYear

1999

Firstpage

24

Lastpage

26

Abstract

A comprehensive HBT noise model for circuit simulation is presented that describes the microwave noise behavior up to the transit frequency. It is based on diode noise theory, and requires only the small-signal equivalent circuit, including the thermal resistance, and the dc bias point. A main feature is correlation of the shot-noise sources at the pn junctions. The model is verified by measurements of the four noise parameters of an InGaP/GaAs HBT, varying frequency and bias conditions.

Keywords

III-V semiconductors; circuit simulation; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; shot noise; thermal noise; HBT noise model; InGaP-GaAs; InGaP/GaAs HBT; bias conditions; circuit simulation; dc bias point; diode noise theory; frequency dependence; microwave noise behavior; pn junctions; shot-noise sources; small-signal equivalent circuit; thermal resistance; transit frequency; Circuit noise; Circuit simulation; Diodes; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.737562

Filename

737562