Title :
Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy
Author :
Van Caenegem, T. ; Van Thourhout, D. ; Galarza, M. ; Verstuyft, S. ; Moerman, I. ; Van Daele, P. ; Baets, R. ; Demeester, P. ; Herben, C.G.P. ; Leijten, X.J.M. ; Smit, M.K.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
fDate :
3/1/2001 12:00:00 AM
Abstract :
A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author´ knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE
Keywords :
MOCVD; integrated optics; semiconductor lasers; vapour phase epitaxial growth; amplifier array; metal organic vapour phase epitaxy; monolithic integration; multi-wavelength laser; selective area growth; transmissive demultiplexer; transmissive multiplexer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010188
