• DocumentCode
    1458875
  • Title

    Au/AuBe/Cr contact to p-ZnTe

  • Author

    Chang, S.J. ; Chen, W.R. ; Su, Y.K. ; Chen, J.F. ; Lan, W.H. ; Chiang, C.I. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    37
  • Issue
    5
  • fYear
    2001
  • fDate
    3/1/2001 12:00:00 AM
  • Firstpage
    321
  • Lastpage
    322
  • Abstract
    Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It was found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0×10-6 Ωcm2 can be achieved for Au/AuBe/Cr on p-ZnTe. It was also found that Zn outdiffusion will significantly degrade the electrical properties of the Al/AuBe contact on p-ZnTe when annealing temperature is above 300°C. Conversely, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application
  • Keywords
    II-VI semiconductors; annealing; beryllium alloys; chromium; contact resistance; gold; gold alloys; ohmic contacts; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; 300 C; Au/AuBe contact; Au/AuBe/Cr contact; ZnTe-Au-AuBe; ZnTe-Au-AuBe-Cr; annealing; electrical properties; outdiffusion; p-ZnTe surface; specific contact resistance; thermal reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010190
  • Filename
    911980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1458875