Title :
Au/AuBe/Cr contact to p-ZnTe
Author :
Chang, S.J. ; Chen, W.R. ; Su, Y.K. ; Chen, J.F. ; Lan, W.H. ; Chiang, C.I. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/2001 12:00:00 AM
Abstract :
Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It was found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0×10-6 Ωcm2 can be achieved for Au/AuBe/Cr on p-ZnTe. It was also found that Zn outdiffusion will significantly degrade the electrical properties of the Al/AuBe contact on p-ZnTe when annealing temperature is above 300°C. Conversely, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application
Keywords :
II-VI semiconductors; annealing; beryllium alloys; chromium; contact resistance; gold; gold alloys; ohmic contacts; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; 300 C; Au/AuBe contact; Au/AuBe/Cr contact; ZnTe-Au-AuBe; ZnTe-Au-AuBe-Cr; annealing; electrical properties; outdiffusion; p-ZnTe surface; specific contact resistance; thermal reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010190
