Title :
An Equivalent Circuit Model of the Traveling Wave Electrode for Carrier-Depletion-Based Silicon Optical Modulators
Author :
Yu, Hui ; Bogaerts, Wim
Author_Institution :
Dept. of Inf. Technol., Ghent Univ. - IMEC, Ghent, Belgium
fDate :
6/1/2012 12:00:00 AM
Abstract :
We propose an equivalent circuit model for the coplanar waveguide (CPW) which serves as the traveling wave electrode to drive carrier-depletion-based silicon modulators. Conformal mapping and partial capacitance techniques are employed to calculate each element of the circuit. The validity of the model is confirmed by the comparison with both finite-element simulation and experimental result. With the model, we calculate the modulation bandwidth for different CPW dimensions and termination impedances. A 3 dB modulation bandwidth of 15 GHz is demonstrated with a traveling wave electrode of 3 mm. The calculation indicates that, by utilizing a traveling wave electrode of 2 mm, we can obtain a 3 dB modulation bandwidth of 28 GHz.
Keywords :
coplanar waveguides; elemental semiconductors; equivalent circuits; finite element analysis; optical modulation; silicon; Si; bandwidth 15 GHz; bandwidth 28 GHz; carrier-depletion; conformal mapping; coplanar waveguide; equivalent circuit; finite element simulation; partial capacitance; silicon optical modulators; traveling wave electrode; Capacitance; Electrodes; Equivalent circuits; Integrated circuit modeling; Modulation; Optical waveguides; Silicon; Equivalent circuits; microwave propagation; optical modulation; p-n junctions; transmission lines;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2012.2188779
