Bandgap voltage reference and temperature sensor in novel SOI technology

Author

Glab, Sebastian ; Baszczyk, Mateusz ; Dorosz, Piotr ; Idzik, Marek ; Kucewicz, Wojciech ; Sapor, Maria ; Arai, Yutaro ; Miyoshi, Takanori ; Kapusta, Piotr ; Takeda, Akiko

Author_Institution

AGH Univ. of Sci. & Technol., Krakow, Poland

fYear

2014

fDate

11-13 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.

Keywords

circuit simulation; diodes; energy gap; network synthesis; reference circuits; silicon-on-insulator; temperature measurement; temperature sensors; PTAT; SOI technology; bandgap voltage reference circuit; chip to chip fabrication; circuit design; circuit simulation; diode model; proportional to absolute temperature; temperature coefficient; temperature sensor; voltage 1.27 V; voltage 10 mV; Integrated circuit modeling; Photonic band gap; Semiconductor diodes; Substrates; Temperature dependence; Temperature measurement; Temperature sensors; Band gap; PTAT; Temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals and Electronic Systems (ICSES), 2014 International Conference on

Conference_Location

Poznan

Type

conf

DOI

10.1109/ICSES.2014.6948708

Filename

6948708