Analytical Model for Power Switching GaN-Based HEMT Design

Author

Esposto, Michele ; Chini, Alessandro ; Rajan, Siddharth

Author_Institution

Dept. of Inf. Eng., Univ. of Modena & Reggio Emilia, Modena, Italy

Volume

58

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

1456

Lastpage

1461

Abstract

The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularly for radio-frequency applications. This structure is suitable for high-frequency switching applications in power electronics because of the high breakdown field of GaN and the high mobility of the channel. In this paper, a physical model for predicting the power-switching operation of GaN-based HEMTs as a function of material and device parameters is proposed. Analytical equations for total losses and power dissipation density are derived and discussed both qualitatively and quantitatively.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power electronics; semiconductor device models; wide band gap semiconductors; GaN; HEMT; channel mobility; high electron mobility transistor; high-frequency switching; power dissipation density; power electronics; power switching GaN; radiofrequency applications; Gallium nitride; HEMTs; Logic gates; Power dissipation; Switches; Switching frequency; Switching loss; Analytical model; GaN high-electron mobility transistor (HEMT); power switching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2112771

Filename

5720293