DocumentCode
1459246
Title
An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion
Author
Jin, Seonghoon ; Hong, Sung-Min ; Jungemann, Christoph
Author_Institution
Synopsys Inc., Mountain View, CA, USA
Volume
58
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
1287
Lastpage
1294
Abstract
We present an efficient method to include full-band-structure effects for the case of a silicon conduction band in a deterministic Boltzmann equation solver based on the high-order spherical harmonics expansion method. This method employs the exact density of states and the group velocity obtained from band structure calculations, and it eliminates the modulus of the wave vector in the formulation such that an explicit invertible dispersion relation is not required. While the present method does not require additional central-processing-unit time and memory, compared with the analytic band model, the simulation results are significantly improved and in excellent agreement with those from the full-band Monte Carlo simulations and from an approach based on an invertible anisotropic band that matches several moments of the group velocity of the full band structure.
Keywords
Boltzmann equation; Monte Carlo methods; conduction bands; silicon; density of states; deterministic Boltzmann equation solver; explicit invertible dispersion; full-band Monte Carlo simulations; full-band-structure effects; high-order spherical harmonics expansion; invertible anisotropic band; silicon conduction band; Analytical models; Approximation methods; Dispersion; Electron mobility; Harmonic analysis; Mathematical model; Scattering; Band structure effects; Boltzmann equation; Monte Carlo (MC) simulations; spherical harmonics;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2108659
Filename
5720294
Link To Document