UV and Visible Electroluminescence From a $\hbox {Sn:Ga}_{2}\hbox {O}_{3}/\hbox {n}^{+}\hbox {-Si}$ Heterojunction by Metal–Organic Chemical Vapor Deposition

A Sn-doped Ga₂O₃ thin film was deposited on a n⁺-Si substrate by metal-organic chemical vapor deposition. The Ga₂O₃ film was found to be amorphous-like and exhibited n-type conduction with Sn doping. Room-temperature electroluminescence was clearly observed from the Sn:Ga₂O₃/n⁺ -Si diode, including an ultraviolet (UV) emission at ~ 370 nm, a yellow emission at ~ 580 nm, and a red emission at ~ 680 nm. The UV emission is assigned to the transition from Sn_Ga donor to the V_Ga acceptor, whereas the visible emissions were assigned to be related to the dangling bond defects.