Title :
A 94-GHz 0.35-W power amplifier module
Author :
Huang, Pin-Pin ; Huang, Tian-Wei ; Wang, Huei ; Lin, Eric W. ; Shu, Yonghui ; Dow, Gee S. ; Lai, Richard ; Biedenbender, Michael ; Elliott, Jeffrey H.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
This paper presents a 94-GHz power amplifier (PA) module. This module contains three identical monolithic microwave integrated circuit (MMIC) PA chips and demonstrates 0.35-W output power at the waveguide output port with a miniature size. The MMIC PA is a two-stage monolithic W-band PA using 0.1-μm pseudomorphic AlGaAs/InGaAs/GaAs T-gate power high electron mobility transistor (HEMT) process. This MMIC PA exhibits a measured linear gain of 8 dB and a maximum output power of 300 mW with 10.5% peak power-added efficiency (PAE) at 94 GHz. To our knowledge, both the 300-mW output power MMIC PA and the 0.35-W PA module represent the highest output power amplification component performance at this frequency
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; power amplifiers; radar transmitters; 0.1 micron; 0.35 W; 10.5 percent; 300 mW; 8 dB; 94 GHz; AlGaAs-InGaAs-GaAs; MMIC PA chips; T-gate power high electron mobility transistor; linear gain; output power; peak power-added efficiency; power amplifier module; two-stage monolithic W-band PA; waveguide output port; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation; Power measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
