Design of broadside-coupled parallel line millimetre wave filters by standard 0.18-μm complimentary metal oxide semiconductor technology

An equivalent circuit technique is used to design a class of compacted millimetre-wave band-pass filters in the standard 0.18-μm complimentary metal oxide semiconductor (CMOS) process. Thin film microstrip is fabricated on a lossy silicon substrate to realise low insertion loss. Using a broadside-coupled scheme and floating metallic patch structure, thin film microstrip band-pass filters are designed and fabricated. An equivalent circuit model and microwave theoretical network analysis is given to explain the performance of the proposed filters. Meandering transmission lines are used to miniaturise the chip size. A class of compacted K-band band-pass filters including one-pole, two-pole and three-pole designs is implemented. The measured results are in good agreement with predicted results.