• DocumentCode
    1459399
  • Title

    All-Solid-State Repetitive Pulsed-Power Generator Using IGBT and Magnetic Compression Switches

  • Author

    Wang, Dongdong ; Qiu, Jian ; Liu, Kefu

  • Author_Institution
    Inst. of Electr. Light Sources, Fudan Univ., Shanghai, China
  • Volume
    38
  • Issue
    10
  • fYear
    2010
  • Firstpage
    2633
  • Lastpage
    2638
  • Abstract
    By utilizing power semiconductor switches, especially high-voltage insulated gate bipolar transistors (IGBTs), as main switches, Marx modulators have demonstrated many advantages such as variable pulse length and pulse-repetition frequency, snubberless operation, and inherent redundancy. However, the relatively slow turn-on speed of the IGBT influences the pulse rise time of the Marx modulator. In this paper, a newly developed all-solid-state pulsed-power generator is proposed. This generator consists of a Marx modulator based on discrete IGBTs and a magnetic pulse-sharpening circuit, which is employed to compress the rising edge of the Marx output pulse. The experimental results are presented with a maximum voltage of 20 kV, a rise time of 200 ns, a pulse duration of 500 ns (full-width at half-maximum), and a repetition rate of 5 kHz on a 285- resistive load. The output power of the generator is 2.5 kW, and the average power in one pulse is 1 MW. The design methods of the IGBT drive circuits and the parameter calculation of the magnetic pulse-sharpening circuit are introduced in detail in this paper. The factors influencing the performance of the generator are also discussed.
  • Keywords
    magnetic switching; power semiconductor switches; pulse generators; pulsed power supplies; IGBT switch; Marx modulator; all solid state pulsed power generator; all solid state repetitive pulsed power generator; insulated gate bipolar transistor; magnetic compression switch; magnetic pulse sharpening circuit; power 2.5 kW; power semiconductor switch; pulse repetition frequency; snubberless operation; variable pulse length; voltage 20 kV; Insulated gate bipolar transistors; Magnetic circuits; Magnetic semiconductors; Magnetic switching; Power generation; Power semiconductor switches; Pulse circuits; Pulse compression methods; Pulse generation; Pulse modulation; Insulated gate bipolar transistors (IGBTs); magnetic switch; marx modulator; solid state;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2010.2045515
  • Filename
    5440900