Title :
Improved MOSFET short-channel device using germanium implantation
Author :
Pfiester, James R. ; Law, Mark E. ; Dutton, Robert W.
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
Germanium doping in silicon tends to suppress any enhancement in dopant diffusion due to excess point defects. By performing a dual implantation of germanium and the normal source-drain dopant, lateral diffusion of the source-drain profile can be controlled, thus resulting in improved short-channel device behavior.<>
Keywords :
elemental semiconductors; germanium; insulated gate field effect transistors; ion implantation; silicon; MOSFET short-channel device; dopant diffusion; lateral diffusion; short-channel device behavior; source-drain dopant; source-drain profile; Annealing; Doping; Etching; Fabrication; Germanium; Implants; Laboratories; MOSFET circuits; Silicon; Tail;
Journal_Title :
Electron Device Letters, IEEE
