• DocumentCode
    1459802
  • Title

    Improved MOSFET short-channel device using germanium implantation

  • Author

    Pfiester, James R. ; Law, Mark E. ; Dutton, Robert W.

  • Author_Institution
    Motorola Inc., Austin, TX, USA
  • Volume
    9
  • Issue
    7
  • fYear
    1988
  • fDate
    7/1/1988 12:00:00 AM
  • Firstpage
    343
  • Lastpage
    346
  • Abstract
    Germanium doping in silicon tends to suppress any enhancement in dopant diffusion due to excess point defects. By performing a dual implantation of germanium and the normal source-drain dopant, lateral diffusion of the source-drain profile can be controlled, thus resulting in improved short-channel device behavior.<>
  • Keywords
    elemental semiconductors; germanium; insulated gate field effect transistors; ion implantation; silicon; MOSFET short-channel device; dopant diffusion; lateral diffusion; short-channel device behavior; source-drain dopant; source-drain profile; Annealing; Doping; Etching; Fabrication; Germanium; Implants; Laboratories; MOSFET circuits; Silicon; Tail;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.738
  • Filename
    738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1459802