DocumentCode
1459808
Title
Validation of the 2 Temperatures Noise Model Using Pre-Matched Transistors in W-Band for Sub-65 nm Technology
Author
Waldhoff, Nicolas ; Tagro, Yoann ; Gloria, Daniel ; Gianesello, Frederic ; Danneville, François ; Dambrine, Gilles
Author_Institution
Inst. d´´Electron., de Microelectron. et de Nanotechnol. (IEMN), Villeneuve d´´Ascq, France
Volume
20
Issue
5
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
274
Lastpage
276
Abstract
This letter presents high frequency noise measurements carried out for MOSFETs in W-band (75-110 GHz). Because the 50 ?? noise figure of 65 nm node MOSFETs is higher than 10 dB in W-band, pre-matched structures covering the entire band have been developed to reduce the noise figure and to increase the gain. Then, in order to validate the 2 temperatures noise model in W-band, only F50 measurements of pre-matched structures are necessary.
Keywords
MOSFET; MOSFET; W-band; high frequency noise measurements; noise figure; noise model; pre-matched structures; pre-matched transistors; MOSFET sub-65 nm; W-band; noise parameters; pre-matched transistors;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2010.2045588
Filename
5440967
Link To Document