Title :
An Integrated Photodetector Based on a Modulation-Doped Heterostructure
Author :
Yao, Jingming ; Cai, Jianhong ; Opper, Heath ; Taylor, Geoffrey W.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Connecticut, Storrs, CT, USA
fDate :
5/15/2011 12:00:00 AM
Abstract :
An optically active heterostructure field effect transistor (HFET) structure is described as a three terminal detector. With an in-plane waveguide optical input it demonstrates natural optoelectronic integration with transistors. Both depletion and enhancement threshold devices are realized with photocurrent enhancement of the HFET current of 1.72 for direct coupling. A simple model of photocurrent generation based on bipolar operation provides good agreement. The bidirectional response may be suitable for optical gating functions in balanced detection.
Keywords :
high electron mobility transistors; integrated optoelectronics; optical waveguides; photodetectors; direct coupling; in-plane waveguide; integrated photodetector; modulation-doped heterostructure; optical gating functions; optically active heterostructure field effect transistor; optoelectronic integration; photocurrent generation; threshold devices; Detectors; Gallium arsenide; HEMTs; High speed optical techniques; MODFETs; Optical detectors; Optical waveguides; Detector; field effect transistor (FET); optoelectronic integrated circuits (OEICs); waveguide;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2119476
