DocumentCode :
145987
Title :
Energy efficiency and conversion in 1D and 2D electronics
Author :
Pop, Eric ; English, Chris ; Feng Xiong ; Feifei Lian ; Serov, Andrey ; Zuanyi Li ; Islam, Shariful ; Dorgan, Vincent
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
35
Lastpage :
37
Abstract :
We review our recent studies at the intersection of energy, nanomaterials and nanoelectronics. Through careful high-field studies of two-dimensional (2D) devices based on graphene and MoS2, we have uncovered details regarding their physical properties and band structure. We have investigated thermoelectric effects in graphene transistors and phase-change memory (PCM) elements for low-power electronics. We find that low-power transistors and memory could be enhanced by built-in thermoelectric effects which are particularly pronounced at nanometer length scales. We have also examined heat flow in composites based on one-dimensional (1D) carbon nanotubes, and uncovered both the lower (diffusive) and upper (ballistic) limits of heat flow in 1D and 2D nanomaterials. Our results suggest fundamental limits and new applications that could be achieved through the co-design of geometry, interfaces, and selection of 1D and 2D nanomaterials.
Keywords :
band structure; carbon nanotubes; field effect transistors; graphene; heat transfer; low-power electronics; molybdenum compounds; nanoelectronics; nanostructured materials; phase change memories; thermoelectricity; 1D carbon nanotubes; 1D electronics; 1D nanomaterials; 2D electronics; 2D nanomaterials; C; MoS2; band structure; energy conversion; energy efficiency; heat flow; low-power electronics; low-power transistors; nanoelectronics; phase change memory; thermoelectric effects; Conductivity; Films; Graphene; Heating; Phase change materials; Thermal conductivity; Transistors; MoS2; ballistic heat flow; carbon nanotubes; data storage; graphene; low-power transistors; thermoelectrics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948751
Filename :
6948751
Link To Document :
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