Title :
Noise Characterization of Double-Sided Silicon Microstrip Detectors With Punch-Through Biasing
Author :
Giacomini, Gabriele ; Bosisio, Luciano ; Rashevskaya, Irina ; Starodubtsev, Oleksandr
Author_Institution :
INFN Trieste, Trieste, Italy
fDate :
4/1/2011 12:00:00 AM
Abstract :
We report on extensive noise measurements performed on double-sided, AC-coupled, punch-through biased silicon strip detectors. We used a single-channel acquisition chain, reading one strip per side, all other strips being kept grounded. The noise has been measured over a wide range of peaking times and leakage currents, allowing a careful determination of the various noise contributions. We determined the noise contribution of the punch-through mechanism and we observed, on different sensors, two unexpected noise terms, one related to the punch-through current and the other to the presence of resistive layers at the Si/SiO2 interface.
Keywords :
microstrip components; readout electronics; semiconductor device noise; silicon radiation detectors; Si-SiO2 interface; double-sided silicon microstrip detectors; leakage currents; noise characterization; noise measurements; peaking times; punch-through biasing; resistive layers; silicon radiation detectors; single-channel acquisition chain; Current measurement; Detectors; Leakage current; Noise; Noise measurement; Strips; 1/f noise; capacitance/admittance measurements; microstrip silicon detectors; punch-through biasing; signal to noise ratio; silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2107749
