Nonlinear modeling of SiGe HBTs up to 50 GHz

Author

Rheinfelder, Clemens N. ; Beisswanger, Frank J. ; Heinrich, Wolfgang

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

45

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2503

Lastpage

2508

Abstract

A new large-signal model for SiGe heterostructure bipolar transistors (HBTs) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement data. The model yields excellent accuracy for dc and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design at 26 and 38 GHz

Keywords

Ge-Si alloys; MMIC oscillators; S-parameters; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; leakage currents; microwave oscillators; semiconductor device models; 50 MHz to 50 GHz; DC parameters; HBT; Kirk-effect; MMIC oscillator design; S-parameter measurements; SiGe; large-signal model; nonideal leakage currents; nonlinear modeling; thermal behavior; Bipolar transistors; Capacitance; Data mining; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; MMICs; Microwave oscillators; Silicon germanium;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.643866

Filename

643866