Title :
Nonlinear modeling of SiGe HBTs up to 50 GHz
Author :
Rheinfelder, Clemens N. ; Beisswanger, Frank J. ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
12/1/1997 12:00:00 AM
Abstract :
A new large-signal model for SiGe heterostructure bipolar transistors (HBTs) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement data. The model yields excellent accuracy for dc and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design at 26 and 38 GHz
Keywords :
Ge-Si alloys; MMIC oscillators; S-parameters; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; leakage currents; microwave oscillators; semiconductor device models; 50 MHz to 50 GHz; DC parameters; HBT; Kirk-effect; MMIC oscillator design; S-parameter measurements; SiGe; large-signal model; nonideal leakage currents; nonlinear modeling; thermal behavior; Bipolar transistors; Capacitance; Data mining; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; MMICs; Microwave oscillators; Silicon germanium;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
