Title :
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk
Author :
Carrillo-Nunez, Hamilton ; Luisier, Mathieu ; Schenk, Andreas
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zürich, Switzerland
Abstract :
Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using a full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model and a drift-diffusion TCAD tool. As third option, the WKB approximation has been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.
Keywords :
III-V semiconductors; field effect transistors; indium compounds; nanowires; silicon; tight-binding calculations; tunnel transistors; InAs-Si; InAs-Si heterojunction nanowire tunnel FET; TCAD tool; WKB approximation; atomistic quantum transport; bulk-like nanowire TFET; drift-diffusion; extreme confinement; extremely narrow TFET; p-type InAs-Si nanowire TFET; tight-binding model; ultra-scaled InAs-Si nanowire TFET; Approximation methods; Dispersion; Logic gates; Semiconductor device modeling; Silicon; Tunneling;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948772
