Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

Author

Carrillo-Nunez, Hamilton ; Luisier, Mathieu ; Schenk, Andreas

Author_Institution

Integrated Syst. Lab., ETH Zurich, Zürich, Switzerland

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

118

Lastpage

119

Abstract

Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using a full-band and atomistic quantum transport simulator based on the sp³d⁵s* tight-binding model and a drift-diffusion TCAD tool. As third option, the WKB approximation has been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.

Keywords

III-V semiconductors; field effect transistors; indium compounds; nanowires; silicon; tight-binding calculations; tunnel transistors; InAs-Si; InAs-Si heterojunction nanowire tunnel FET; TCAD tool; WKB approximation; atomistic quantum transport; bulk-like nanowire TFET; drift-diffusion; extreme confinement; extremely narrow TFET; p-type InAs-Si nanowire TFET; tight-binding model; ultra-scaled InAs-Si nanowire TFET; Approximation methods; Dispersion; Logic gates; Semiconductor device modeling; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948772

Filename

6948772