Title :
Practical waveform engineering
Author_Institution :
Center for High Freq. Eng., Cardiff Univ., Cardiff, UK
Abstract :
RF I-V waveform measurement and engineering systems are now finally enabling practical waveform engineering to be directly undertaken with systems capable of supporting continuous wave stimulus reaching a high level of maturity. On-going research and development activities are presently addressing the multitone requirement. The availability of RF I-V measurement and engineering capability extends the characterization opportunities for both high-frequency/speed transistor technology developers and circuit/system designers; terminal waveforms are the unifying theoretical link between transistor technology, circuit design, and system performance. Design support can involve the direct utilization of such a measurement system in the design investigation/evaluation loop of either power transistor technology or PAs. This eliminates the black box design processes and allows for the development of new intelligent design processes that are completely founded on theoretical waveform analysis. Alternatively, it can also indirectly support the amplifier investigation/evaluation loop by supporting the development or improving the accuracy of nonlinear transistor models or by providing CAD-accessible behavioral or behavioral model parameter datasets. W can now only hope that, triggered by the availability of RF waveform measurement and engineering systems, we will see a renaissance in theoretical waveform mathematical analysis addressing not only power and efficiency but also design sensitivity and linearity.
Keywords :
circuit CAD; power transistors; CAD; RF I-V waveform measurement; circuit design; continuous wave stimulus; high-frequency transistor technology; multitone requirement; nonlinear transistor models; power transistor technology; practical waveform engineering; terminal waveforms;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2009.934518