Test structures to measure the Seebeck coefficient of CMOS IC polysilicon

Author

von Arx, M. ; Paul, O. ; Baltes, Henry

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

Volume

10

Issue

2

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

201

Lastpage

208

Abstract

We report on two thermal characterization structures to measure the Seebeck coefficient α of CMOS IC polysilicon thin films relevant for integrated thermal microtransducers. The test structures were fabricated using a commercial 1.2 μm CMOS process of Austria Mikro Systeme (AMS). The fabrication of the first structure relies on silicon micromachining. In contrast the second, planar, structure is ready for measurement after IC fabrication. The temperature dependent α of the two polysilicon layers of the AMS process was measured with both devices. The agreement between the thermoelectric coefficients obtained with the two types of structures is better than 2.1 μV at 300 K

Keywords

CMOS integrated circuits; Seebeck effect; electric variables measurement; finite element analysis; integrated circuit measurement; integrated circuit testing; micromachining; microsensors; semiconductor thin films; silicon; thermal analysis; thermal variables measurement; 1.2 micron; Austria Mikro Systeme; CMOS IC polysilicon; IC fabrication; Seebeck coefficient measurement; Si; Si micromachining; integrated thermal microtransducers; planar structure; polysilicon thin films; test structures; thermal characterization structures; thermoelectric coefficients; CMOS integrated circuits; CMOS process; Fabrication; Integrated circuit testing; Micromachining; Silicon; System testing; Temperature dependence; Thermoelectricity; Transistors;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.572069

Filename

572069