Title :
Influence of die attachment on MOS transistor matching
Author :
Bastos, Jose ; Steyaert, Michel S J ; Pergoot, Anelia ; Sansen, Willy M.
Author_Institution :
Katholieke Univ., Leuven, Heverlee, Belgium
fDate :
5/1/1997 12:00:00 AM
Abstract :
A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 μm CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors
Keywords :
CMOS integrated circuits; integrated circuit technology; internal stresses; microassembling; 0.7 micron; CMOS technology; MOS transistor matching; degradation factor; die attachment; eutectic bonding; polyimide bonding; residual stress; test chip; CMOS technology; Circuit testing; MOSFETs; Microassembly; Polyimides; Residual stresses; Semiconductor device measurement; Semiconductor device packaging; Threshold voltage; Wafer bonding;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
