Title :
High performance high reliability AlN/GaN DHFET
Author :
Medjdoub, F. ; Okada, Etienne ; Grimbert, Bertrand ; Ducatteau, Damien ; Silvestri, Riccardo ; Meneghini, Matteo ; Zanoni, Enrico ; Meneghesso, Gaudenzio
Author_Institution :
Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve-d´Ascq, France
Abstract :
We report on AlN/GaN double heterostructures for high frequency applications. 600 hours preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) at 10 and 18 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device reliability; wide band gap semiconductors; AlN-GaN; CW power-added-efficiency; RF devices; Si; SiC; device stability; double heterostructures; drain bias; frequency 10 GHz; frequency 18 GHz; high performance high reliability DHFET; millimeter-wave device stability; reliability assessment; size 100 nm; size 150 nm; size 6 nm; time 600 hour; ultrathin barrier devices; Gallium nitride; III-V semiconductor materials; Logic gates; Silicon; Silicon carbide; Stress; Substrates; AlN/GaN DHFET; RF power; load-pull; power-added-efficiency (PAE); reliability;
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
Print_ISBN :
978-1-4799-4378-4
DOI :
10.1109/ESSDERC.2014.6948779
