DocumentCode :
1460392
Title :
Low-Voltage Poly(3-Hexylthiophene)/Poly(Vinyl Alcohol) Field-Effect Transistor and Inverter
Author :
Machado, Wagner S. ; Hümmelgen, Ivo A.
Author_Institution :
Dept. de Fis., Univ. Fed. do Parana, Curitiba, Brazil
Volume :
59
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
1529
Lastpage :
1533
Abstract :
We report on bottom-gate top-contact organic field-effect transistors that use regioregular poly(3-hexylthiophene) (rr-P3HT) as a channel semiconductor and poly(vinyl alcohol) as a gate insulator. We determine that the field-effect mobility of the rr-P3HT is 0.08 cm2 ·V-1·s-1, the threshold voltage is -1.1 V, and the on/off current ratio is 103, demonstrating the transistor operation in an inverter.
Keywords :
invertors; organic field effect transistors; polymers; bottom-gate top-contact organic field-effect transistors; channel semiconductor; field-effect mobility; gate insulator; inverter; low-voltage poly(3-hexylthiophene)/poly(vinyl alcohol) field-effect transistor; regioregular poly(3-hexylthiophene) (rr-P3HT); rr-P3HT; voltage -1.1 V; Dielectrics; Insulators; Inverters; Logic gates; OFETs; Polymers; Inverter; organic thin-film transistor; poly(3-hexylthiophene) (P3HT); poly(vinyl alcohol) (PVA);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2187904
Filename :
6161629
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1460392
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