DocumentCode :
1460540
Title :
Semi-empirical neural network modeling of metal-organic chemical vapor deposition
Author :
Nami, Ziba ; Misman, Ozgur ; Erbil, Ahmet ; May, Gary S.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
10
Issue :
2
fYear :
1997
fDate :
5/1/1997 12:00:00 AM
Firstpage :
288
Lastpage :
294
Abstract :
Metal-organic chemical vapor deposition (MOCVD) is an important technique for growing thin films with various applications in electronics and optics. The development of accurate and efficient MOCVD process models is therefore desirable, since such models ran be instrumental in improving process control in a manufacturing environment. This paper presents a semi-empirical MOCVD model based on “hybrid” neural networks. The model is constructed by characterizing the MOCVD of titanium dioxide (TiO2) films through the measurement of deposition rate over a range of deposition conditions by a statistically designed experiment in which susceptor and source temperature, flow rate of the carrier gas for the precursor and chamber pressure are varied. A modified backpropagation neural network is then trained on the experimental data to determine the value of the adjustable parameters in an analytical expression for the TiO2 deposition rate. In so doing, a general purpose methodology for deriving semi-empirical neural process models which take into account prior knowledge of the underlying process physics is developed
Keywords :
backpropagation; chemical vapour deposition; design of experiments; neural nets; semiconductor process modelling; titanium compounds; TiO2; backpropagation; deposition rate; hybrid neural network; manufacturing; metalorganic chemical vapor deposition; process control; semi-empirical model; statistically designed experiment; thin film growth; titanium dioxide; Chemical vapor deposition; Instruments; MOCVD; Manufacturing processes; Neural networks; Optical computing; Optical films; Process control; Radio access networks; Sputtering;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.572084
Filename :
572084
Link To Document :
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