Silicon junction power diodes

A simplified description of the physical processes responsible for conduction in silicon is given which forms the basis for a description of the properties of p-n junctions and hence of silicon diodes. An account of the three main methods of making p-n junctions and of the properties of diodes made by these methods then follows. The limitations of the various methods of making diodes and the probable limits of performance which can be achieved using them are discussed. The characteristics of silicon junction diodes which are superior to those of other rectifiers are emphasized and some of the uses for which they possess notable advantages described.