DocumentCode
146070
Title
Variability of UTBB MOSFET analog figures of merit in wide frequency range
Author
Makovejev, S. ; Esfeh, B. Kazemi ; Raskin, Jean-Pierre ; Kilchytska, V. ; Flandre, Denis ; Barral, V. ; Planes, N. ; Haond, M.
Author_Institution
ICTEAM Inst., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fYear
2014
fDate
22-26 Sept. 2014
Firstpage
222
Lastpage
225
Abstract
Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.
Keywords
MOSFET; silicon-on-insulator; FDSOI MOSFET; UTBB MOSFET analog figures of merit; ultrathin body and buried oxide; wide frequency range; FinFETs; Frequency dependence; Logic gates; Silicon; Standards; Substrates; FDSOI; UTBB; analog figures of merit; intrinsic gain; output conductance; self-heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location
Venice
ISSN
1930-8876
Print_ISBN
978-1-4799-4378-4
Type
conf
DOI
10.1109/ESSDERC.2014.6948800
Filename
6948800
Link To Document