DocumentCode :
146071
Title :
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes
Author :
Besnard, G. ; Garros, Xavier ; Andrieu, F. ; Nguyen, P. ; Van Den Daele, W. ; Reynaud, P. ; Schwarzenbach, W. ; Delprat, D. ; Bourdelle, Konstantin K. ; Reimbold, Gilles ; Cristoloveanu, S.
Author_Institution :
Soitec, Parc Technol. des Fontaines, Bernin, France
fYear :
2014
fDate :
22-26 Sept. 2014
Firstpage :
226
Lastpage :
229
Abstract :
The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; HC reliability; NMOS transistors; advanced CMOS technology nodes; biaxially tensile-strain SOI substrates; drive current; hot carrier reliability; interface quality; sSOI-based devices; standard unstrained SOI substrates; strained FDSOI nMOSFETs; Degradation; Logic gates; MOSFET; Reliability; Stress; Substrates; FDSOI; Hot Carrier; nMOSFET; reliability; sSOI; strained silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location :
Venice
ISSN :
1930-8876
Print_ISBN :
978-1-4799-4378-4
Type :
conf
DOI :
10.1109/ESSDERC.2014.6948801
Filename :
6948801
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=146071
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