Title :
Freewheeling diode reverse-recovery failure modes in IGBT applications
Author :
Rahimo, Munaf T. ; Shammas, Noel Y A
Author_Institution :
Res. & Dev., ABB Semicond. AG, Lenzburg, Switzerland
Abstract :
In this paper, reverse-recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching occur during the recovery period in modern high-frequency power electronic applications. The work presented here confirms that the reverse-recovery process can by expressed by means of diode capacitance effects which influence the reverse-recovery characteristics. The paper also shows that the control of the carrier gradient and the remaining stored charge in the drift region during the recovery phase influence both failure modes and determine if the diode exhibits soft, snappy, or dynamic avalanche recovery characteristics
Keywords :
capacitance; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; IGBT; carrier gradient control; diode capacitance effects; drift region; dynamic avalanching occur; freewheeling diode reverse-recovery failure modes; high-frequency power electronic applications; power diodes; recovery period; remaining stored charge; reverse-recovery characteristics; reverse-recovery process; semiconductor device simulation tools; Circuits; Industry Applications Society; Insulated gate bipolar transistors; P-i-n diodes; Power electronics; Semiconductor devices; Semiconductor diodes; Silicon; Switching loss; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
